發表論文
我們以開放和協作的方式與世界各地的優秀大學、研究中心和工業合作伙伴合作。 到目前為止，我們已經開發了各種定制的 GaN 外延結構，以滿足我們客戶和合作伙伴的特定設計。 可以在此處列出的出版物中找到更多詳細信息。想與我們討論您的想法嗎？聯系郵箱：info@enkris.com。
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720V/0.35mΩ·cm2 Fully-Vertical GaN-on-Si Power Diodes by Selective Removal of Si substrates and buffer layers
YuhaoZhang,MengyangYuan,NadimChowdhury,KaiCheng,andTomasPalacios
IEEE Electron Device Letters, 39(5), 715-718 (2018)
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Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance
JunMa,CatherineErine,PengXiang,KaiCheng,andElisonMatioli
Appl. Phys. Lett. 113, 242102 (2018)
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Gate leakage mechanisms in normally off p-GaN/AlGaN/GaN high electron mobility transistors
NingXu,RonghuiHao,FuChen,XiaodongZhang,HuiZhang,PeipeiZhang2,XiaoyuDing,LiangSong,GuohaoYu,KaiCheng,YongCaiandBaoshunZhang
Appl. Phys. Lett. 113, 152104 (2018)
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Investigation on Surface Polarization of Al2O3-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy
TianLiDuan,JiShengPan,NingWang,KaiCheng&HongYuYu
Nanoscale Research Letters volume 12, 499 (2017)
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The Growth Technology of High-Voltage GaN on Silicon
PengXiang,LiyangZhang,KaiCheng
Gallium Nitride Power Devices; Edited By Hongyu Yu, Tianli Duan, Jenny Stanford Publishing
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Investigation of AlGaN/GaN HEMTs degradation with gate pulse stressing at cryogenic temperature
NingWang,HuiWang,XinpengLin,YongleQi,TianliDuan,LingliJiang,ElinaIervolino,KaiChengandHongyuYu
AIP Advances 7, 095317 (2017)
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A GaN HEMT Structure Allowing Self-Terminated, Plasma-Free Etching for High-Uniformity, High-Mobility Enhancement-Mode Devices
ShuxunLin,MaojunWang,FeiSang,MingTao,ChengP.Wen,BingXie,MinYu,JinyanWang,YilongHao,WengangWu,JunXu,KaiCheng,andBoShen
IEEE Electron Device Lett. 37, 377 (2016)
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